GAP-FILLING METHOD FOR A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

Abstract: a gap-filling method for a semiconductor device and method of manufacturing the semiconductor device using the same, are provided. the gap-filling method may include: preparing a substrate with a hole pattern; supplying a process gas to the substrate and applying a first vhf power source to form a pulse wave plasma to form a first silicon nitride layer in the hole pattern; and supplying the process gas to the substrate and applying a second vhf power source to form a continuous wave plasma to form a second silicon nitride layer on the first silicon nitride layer.

Inventor(s): Chang Gyu SONG, Ye Ji CHOI, Sang Min LEE, Young Chul CHOI, Min Ji KIM

CPC Classification: H01L21/76837 ({Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics})

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