SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract: an integrated circuit device and a method of manufacturing the same are provided. the method includes steps of: forming a semiconductor device on a substrate; forming a first interconnect structure and a dielectric layer over the semiconductor device; and forming a second interconnect structure over the first interconnect structure, wherein the formation of the second interconnect structure includes: forming an insulating film over the first interconnect structure; depositing an etch stop layer over the insulating film, wherein the etch stop layer and the insulating film include different materials; depositing an isolation layer over the etch stop layer; performing a first etching operation to form a via penetrating the isolation layer and exposing the etch stop layer; and performing a second etching operation to extend the via downward to penetrate the etch stop layer and the insulating film and expose a portion of the first interconnect structure.

Inventor(s): JHENG-HONG JIANG, SHING-HUANG WU, CHIA-WEI LIU

CPC Classification: H01L21/76832 ({Multiple layers})

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