SEMICONDUCTOR STRUCTURE

Abstract: a semiconductor structure including a substrate and an isolation structure is provided. the substrate includes a device region. the isolation structure is located in the substrate. the isolation structure surrounds the device region. the isolation structure includes a first dielectric layer and a second dielectric layer. the first dielectric layer and the second dielectric layer are located in the substrate. the first dielectric layer is located between the second dielectric layer and the substrate. the second dielectric layer includes a first portion and a second portion. the second portion is located on the first portion. the distance between the second portion and the substrate in the device region is greater than the distance between the first portion and the substrate in the device region.

Inventor(s): Hung-Yu Wei

CPC Classification: H01L21/76224 ({using trench refilling with dielectric materials (trench filling with polycristalline silicon ; together with vertical isolation, e.g. trench refilling in a SOI substrate )})

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