DEPOSITION APPARATUS WITH DETECTION SYSTEM AND METHODS

Abstract: a method includes: flowing a process gas into a chamber of a furnace; forming a material layer on a wafer via the process gas; flowing a purge gas into the chamber; exhausting the purge gas and particles from the chamber via an exhaust line; detecting the particles in the exhaust line; determining whether a particle parameter associated with the particles exceeds a threshold value; and in response to the particle parameter exceeding the threshold value, adjusting flow of the purge gas into the chamber.

Inventor(s): Ming-Yao HSIAO, Yu-Sen CHU

CPC Classification: H01L21/67253 (Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components {; Apparatus not specifically provided for elsewhere (processes per se , , ; simple temporary support means, e.g. using adhesives, electric or magnetic means , ; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto ;)})

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