METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Abstract: a film is formed on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer by supplying a first precursor and an addition agent to the substrate, producing a second precursor that is chemically more stable than the first precursor, and exposing and adsorbing the first precursor and the second precursor to a surface of the substrate; and (b) modifying the first layer into a second layer by supplying a reactant to the substrate.

Inventor(s): Kimihiko NAKATANI, Nagisa SUYAMA, Tomoya NAGAHASHI

CPC Classification: H01L21/0228 ({deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD})

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