SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Abstract: a substrate processing method includes a liquid film forming step, a hole forming step of discharging gas at a hole-forming flow rate from a central discharge port of a fluid nozzle located at a central lower position toward a central portion of the upper surface of the substrate to form at a central portion of the liquid film an exposing hole where the central portion of the upper surface of the substrate is exposed, and a hole widening step of discharging gas at a hole-widening flow rate greater than the hole-forming flow rate, from the central discharge port of the fluid nozzle located at a central upper position higher than the central lower position, toward the central portion of the upper surface of the substrate to widen an outer edge of the exposing hole up to an outer perimeter of the upper surface of the substrate.

Inventor(s): Tetsuya EMOTO, Hidekazu ISHIKAWA, Tomonori KOJIMARU, Pohling THEN

CPC Classification: H01L21/02057 ({Cleaning during device manufacture})

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