Jump to content

20250232966. Wafer Processing (Hitachi High-Tech)

From WikiPatents

WAFER PROCESSING APPARATUS

Abstract: to provide a wafer processing apparatus that can appropriately reduce impact gases in the exhaust gas by a scrubber. a wafer processing apparatus includes: a wafer processing unit that supplies a treatment gas to a vessel and processes a wafer that is placed in the vessel as a processed target, and the wafer processing unit being joined to a scrubber that performs a scrubbing process to reduce an impact gas in an exhaust gas discharged from the vessel; and a control device that controls the wafer processing unit and the scrubber. the scrubber is equipped with the function to increase or decrease the amount of the impact gas reduced by the scrubbing process based on the received command signals or signals indicating different amounts of impact gases. the control device transmits beforehand scrubbing operation information for the scrubber, the scrubbing operation information changing an operating state of the scrubber to enable the scrubbing process of the exhaust gas based on a processing condition of the wafer in the wafer processing unit obtained in advance.

Inventor(s): Yutaka KADOMOTO, Kohei SATO

CPC Classification: H01J37/32844 (Gas-filled discharge tubes (heating by discharge ))

Search for rejections for patent application number 20250232966


Cookies help us deliver our services. By using our services, you agree to our use of cookies.