PLASMA PROCESSING APPARATUS

Abstract: a plasma processing apparatus including a processing chamber and a cylindrical sample stage disposed within the processing chamber and having an upper surface on which the wafer is placed, the sample stage including a disc-like substrate; a dielectric film covering an upper surface of the substrate; and a heater layer disposed inside the dielectric film. the heater layer includes a plurality of film heaters disposed in a plurality of rectangular regions each disposed with one side of the rectangular shapes facing to adjacent regions. a cylindrical power supply connector detachable from a bottom of the substrate is configured to be electrically connected to each of the plurality of film heaters, and a wiring component includes a plurality of lines and is made of a resin-made plate-like component connected to a bottom of the power supply connector, and has an arm part extending along a bottom surface of the substrate.

Inventor(s): Yuki TANAKA, Takamasa ICHINO, Shintaro NAKATANI, Tomoaki HYODO

CPC Classification: H01J37/32724 (Gas-filled discharge tubes (heating by discharge ))

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