PLASMA PROCESSING APPARATUS

Abstract: a plasma processing apparatus includes a discharge chamber , a processing chamber , and an exhaust chamber that are provided inside a vacuum container . a sample stage on which a wafer is placeable is disposed inside the processing chamber . a dispersion plate is provided between the processing chamber and the discharge chamber . a plurality of through holes are formed in the dispersion plate such that the processing chamber and the discharge chamber communicate with each other. an exhaust plate is provided between the processing chamber and the exhaust chamber in a manner of surrounding the sample stage . a plurality of through holes are formed in the exhaust plate such that the processing chamber and the exhaust chamber communicate with each other. an electrode el having a ring shape is attached to the dispersion plate , and an electrode el having a ring shape is attached to the exhaust plate . variable dc power supplies are electrically connected to the electrode el and the electrode el, respectively.

Inventor(s): Kazuya TAJIMA, Shunsuke KANAZAWA

CPC Classification: H01J37/32697 (Gas-filled discharge tubes (heating by discharge ))

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