Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

Abstract: the present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, including: at least one metal atom selected from the group consisting of ti, zr, and hf; and a ligand coordinated to the metal atom, wherein the ligand contains a ligand represented by the following general formula (1). the present invention can provide: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties at the same time; a composition for forming a metal-containing film using the compound; and a patterning process using the composition.

Inventor(s): Nobuhiro NAGAMACHI, Naoki KOBAYASHI, Daisuke KORI, Kenta ISHIWATA, Shohei IWAMORI

CPC Classification: G03F7/094 (characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general ))

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