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20250231482. Positive Resist M (SHIN-ETSU CHEMICAL ., .)

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POSITIVE RESIST MATERIAL AND PATTERNING PROCESS

Abstract: the present invention is a positive resist material includes a base polymer with a sulfonium salt or an iodonium salt of carboxylic acid as a pendant group attached to a polymer backbone, wherein the base polymer contains a repeating unit (a) containing one or more iodine atoms between the polymer backbone and carboxylate, the repeating unit (a) containing one or both of a repeating unit represented by the following general formula (a)-1 and a repeating unit represented by the following general formula (a)-2. this provides: a positive resist material that enables high sensitivity superior to conventional positive resist materials, less dimensional variation, and a favorable pattern profile after exposure; a positive resist composition containing the material and a patterning process using the composition; and a polymer compound that yields the positive resist material are to be provided.

Inventor(s): Yutaro OTOMO, Jun HATAKEYAMA

CPC Classification: G03F7/0392 (Macromolecular compounds which are photodegradable, e.g. positive electron resists ( takes precedence; macromolecular quinonediazides ))

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