RESIST COMPOSITION AND PATTERN FORMING PROCESS

Abstract: a resist composition is provided comprising a bis-onium salt consisting of a divalent anion having an iodized phenoxide anion structure and an arylsulfonic acid anion structure bonded to the aromatic ring of the phenoxide anion structure, and onium cations. it exhibits a high sensitivity and forms a pattern with reduced lwr or improved cdu independent of whether it is of positive or negative type.

Inventor(s): Jun Hatakeyama

CPC Classification: G03F7/0045 ({with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors})

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