GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL COMMUNICATION

Abstract: gallium nitride (gan) integrated circuit technology with optical communication is described. in an example, an integrated circuit structure includes a layer or substrate having a first region and a second region, the layer or substrate including gallium and nitrogen. a gan-based device is in or on the first region of the layer or substrate. a cmos-based device is over the second region of the layer or substrate. an interconnect structure is over the gan-based device and over the cmos-based device, the interconnect structure including conductive interconnects and vias in a dielectric layer. a photonics waveguide is over the interconnect structure, the photonics waveguide including silicon, and the photonics waveguide bonded to the dielectric layer of the interconnect structure.

Inventor(s): Han Wui THEN, Marko RADOSAVLJEVIC, Nicole K. THOMAS, Pratik KOIRALA, Nityan NAIR, Paul B. FISCHER

CPC Classification: G02B6/4274 (Coupling light guides with opto-electronic elements)

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