MAGNETIC TUNNEL JUNCTION DEVICES

Abstract: in an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.

Inventor(s): Jui-Fen Chien, Wei-Gang Chiu, Tsann Lin

CPC Classification: G01R33/093 ({using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films )})

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