Systems and Methods for Substituent Doping of Diamonds

Abstract: using the disclosed embodiments, co-doping nanocrystalline diamond (ncd) films with lithium, boron, and phosphorus leads to a significant improvement in electrical properties compared to existing approaches, even single-doped diamond. the combination of ion implantation and annealing results in enhanced carrier concentration, lower resistivity, and higher mobility, making these films highly suitable for advanced electronic applications. implementation of the disclosed embodiments confirm that the disclosed co-doping strategy induces specific crystallographic orientations and dopant clustering, which contribute to the improved transport properties. the efficiency of the disclosed embodiments support emphasizing the role of crystallographic reorientation and dopant clustering in theoretical modeling in order to enhance diamond's electronic performance.

Inventor(s): Adam Khan

CPC Classification: C30B31/22 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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