SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

Abstract: a technique including: a plurality of substrate supports for supporting at least one substrate; a processing container in which the supports and the substrate are processed; a gas supplier for supplying a film forming gas for depositing a film and a cleaning gas removing the deposited film into the processing container; a memory that stores the thickness of the deposited film; and a controller for controlling the cleaning process of the processing container and the two or more of the plurality of substrate supports, wherein the cleaning process is performed where value of the processing container is greater than or equal to a threshold value and, wherein the cleaning process including: allocating a cleaning time for each of the plurality of substrate supports; taking the substrate supports into the processing container; supplying the cleaning gas to remove the deposited film; and, taking the substrate supports from the processing container.

Inventor(s): Hideharu ITATANI

CPC Classification: C23C16/4405 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

Search for rejections for patent application number 20250230542