MONOLITHIC INTEGRATION OF DIFFERENT LIGHT EMITTING STRUCTURES ON A SAME SUBSTRATE

Abstract: the disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. in an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes gan. the device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. the device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes gan. the device may be part of a light field display and may be connected to a backplane of the light field display.

Inventor(s): Gang He, Sheila K. Hurtt

CPC Classification: H10H20/821 (No explanation available)

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