IMAGING DEVICE AND SEMICONDUCTOR DEVICE

Abstract: there is provided an imaging device and a semiconductor device capable of suppressing deterioration of characteristics of pixel transistors (alternatively, transistors) provided in a second semiconductor layer due to electromagnetic interference from a first semiconductor layer side. an imaging device includes a first semiconductor layer provided with a sensor pixel that performs photoelectric conversion, a second semiconductor layer disposed on one surface side of the first semiconductor layer and provided with a pixel transistor for outputting a pixel signal based on a charge output from the sensor pixel, an insulating layer disposed between the first semiconductor layer and the second semiconductor layer, and a conductor layer disposed between the sensor pixel and the pixel transistor in the insulating layer. a potential of the conductor layer is fixed to a reference potential.

Inventor(s): SUSUMU TONEGAWA, SHINTARO OKAMOTO

CPC Classification: H10F39/80377 (No explanation available)

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