CMOS IMAGE SENSING DEVICE

Abstract: an image sensing device includes: a substrate; and a plurality of pixels isolated by an insulating film disposed within the semiconductor substrate. the plurality of pixels share a first active region, wherein at least one of the plurality of pixels comprises a photoelectronic conversion element and a transfer transistor. the photoelectronic conversion element is connected to the first active region by the transfer transistor. the first active region and a first floating diffusion region are connected by the transfer transistor. the first floating diffusion region is connected to a gate of a source follower transistor, and the first floating diffusion region is connected to a second floating diffusion region through a first transistor. the first transistor is turned off when an operating mode is a first mode. the first transistor is turned on when the operating mode is a second mode different from the first mode.

Inventor(s): Hwanwoong KIM, Hyuncheol KIM

CPC Classification: H10F39/80373 (No explanation available)

Search for rejections for patent application number 20250221069