INTEGRATED CIRCUIT DEVICE WITH ZENER DIODE WITH REDUCED LEAKAGE AND/OR INCREASED BREAKDOWN VOLTAGE

Abstract: a method forms an integrated circuit, by steps including forming a polysilicon layer having a first side over a semiconductor substrate having a top surface, forming over the semiconductor substrate a first resist layer having a second side spaced apart from the first side, forming a diode well extending into the semiconductor substrate between the first side and the second side, the diode well having a first conductivity type, forming over the semiconductor substrate a second resist layer having a third side, and forming a diode terminal extending into the semiconductor substrate between the first side and the third side, the diode terminal having an opposite second conductivity type and extending from the diode well along the top surface.

Inventor(s): Aarthi Rao, Natasha Lavrovskaya, Alexei Sadovnikov, James Robert Todd

CPC Classification: H10D89/611 (No explanation available)

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