DIODE WITH INTRINSIC EPITAXIAL LAYER

Abstract: an electronic device includes an n-type substrate having a first concentration of n-type dopants, an intrinsic epitaxial layer on the n-type substrate having a second concentration of n-type dopants that is less than the first concentration of n-type dopants, an n-type epitaxial layer on the intrinsic epitaxial layer having a third concentration of n-type dopants that is greater than the second concentration of n-type dopants, and a p-type epitaxial layer on the n-type epitaxial layer. a method includes growing an intrinsic epitaxial layer having a second concentration of n-type dopants on an n-type substrate having a higher first concentration of n-type dopants, growing an n-type epitaxial layer having a third concentration of n-type dopants on the intrinsic epitaxial layer, the third concentration of n-type dopants being greater than the second concentration of n-type dopants, and growing a p-type epitaxial layer on the n-type epitaxial layer.

Inventor(s): Tian Ping Lv, Yuanchun Wu, Sunglyong Kim, Kartikey Thakar, Cheng Yuan Xu

CPC Classification: H10D89/611 (No explanation available)

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