INTEGRATED CIRCUIT STRUCTURE WITH FRONT-SIDE-CUT BACKSIDE SOURCE OR DRAIN CONTACT

Abstract: integrated circuit structures having front-side-cut backside source or drain contacts are described. in an example, an integrated circuit structure includes a first gate stack over a first plurality of horizontally stacked nanowires or fin, and a second gate stack over a second plurality of horizontally stacked nanowires or fin. a first epitaxial source or drain structure is at an end of the first plurality of horizontally stacked nanowires or fin, the first epitaxial source or drain structure having a backside contact structure thereon. a second epitaxial source or drain structure is at an end of the second plurality of horizontally stacked nanowires or fin, the second epitaxial source or drain structure having a backside dielectric structure thereon, the backside dielectric structure laterally spaced apart from the backside contact structure. a dielectric gate cut plug is laterally between and in contact with the backside dielectric structure and the backside contact structure.

Inventor(s): Leonard P. GULER, Ehren MANNEBACH, Shaun MILLS, Dincer UNLUER, Kalpesh MAHAJAN, Joseph D’SILVA, Mauro J. KOBRINSKY, Vivek VISHWAKARMA, Jessica PANELLA, Umang DESAI

CPC Classification: H10D86/60 (No explanation available)

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