SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Abstract: a semiconductor structure and a method for manufacturing the same. the method comprises: providing a substrate comprising a first surface and a second surface opposite to each other; forming, on the first surface, a first transistor structure comprising a first channel layer, a first gate structure disposed on the first channel layer, and a first source-drain epitaxial layer disposed on two lateral sides of the first gate structure; providing, on the second surface, a second transistor structure comprising a second channel layer, a second gate structure disposed on the second channel layer, and a second source-drain epitaxial layer disposed on two lateral sides of the second gate structure; forming, in the second source-drain epitaxial layer and the substrate, a first conductive plug electrically connected to the first source-drain epitaxial layer; and forming a first interconnection layer on the first conductive plug and the second gate structure.

Inventor(s): Huaxiang Yin, Yadong Zhang, Qingzhu Zhang, Feixiong Wang, Yunjiao Bao

CPC Classification: H10D84/856 (No explanation available)

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