INTEGRATED CIRCUIT DEVICE

Abstract: an integrated circuit device includes a gate isolation insulator between the fin-type active regions, the gate isolation insulator cutting and separating at least one gate line among the plurality of gate lines. the gate isolation insulator includes a first gate isolation insulating layer embedded in a gate isolation space resulting from cutting the at least one gate line, the first gate isolation insulating layer protruding above a top surface of the at least one gate line in a vertical direction, a second gate isolation insulating layer embedded in a gate recessed hole inwardly recessed from a top surface of the first gate isolation insulating layer, and a third gate isolation insulating layer capping the first gate isolation insulating layer and the second gate isolation insulating layer.

Inventor(s): Yeonghan Gwon, Hanyoung Song, Jeonghyeon Lee, Junyoup Lee, Hakjong Lee

CPC Classification: H10D84/83 (No explanation available)

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