INTEGRATED DEVICE AND PREPARATION METHOD THEREOF

Abstract: an integrated device and a preparation method thereof are provided. the integrated device includes: a substrate; a compound semiconductor composite structure disposed on the substrate; a first component including a first electrode and second electrodes disposed on two sides of the first electrode; a second component including a gate electrode, and a source electrode and a drain electrode that are disposed on two sides of the gate electrode. the first electrode and the gate electrode are spaced apart on the compound semiconductor composite structure. the integrated device further includes an n-type nitride layer including a first n-type nitride layer disposed between the compound semiconductor composite structure and the first electrode; and a p-type nitride layer disposed between the compound semiconductor composite structure and the gate electrode. the integrated device improves its properties, a threshold voltage thereof is reduced, and turn-on power consumption thereof is reduced.

Inventor(s): Shengnan JI, NIEN TZE YEH, Cheng LIU, Han XU, Zheli Wang, Yuyu Liang

CPC Classification: H10D84/811 (No explanation available)

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