20250221015. Integrated Deep (TEXAS INSTRUMENTS INCORPORATED)
INTEGRATED DEEP TRENCH HIGH-K CAPACITOR AND METHOD
Abstract: described examples include an integrated circuit including a dielectric layer located over a top surface of a semiconductor substrate and extending over a gate electrode. a trench extends from a top surface of the dielectric layer into the substrate. a conductive trench electrode is within the trench, and a dielectric liner is between the trench electrode and the semiconductor substrate. a cap dielectric layer is located on the conductive trench electrode and on the dielectric layer, and extends over the gate electrode.
Inventor(s): Yanbiao Pan, Jackson Bauer, Pushpa Mahalingam, Karl Disher, Abbas Ali, Ravi Natarajan
CPC Classification: H10D84/811 (No explanation available)
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