BIPOLAR TRANSISTOR REVERSE RECOVERY

Abstract: an electronic device includes an npn bipolar transistor in an isolation tank region of an n-type semiconductor layer and having a p-type base region, an n-type emitter region, and an n-type collector region and a pnp bipolar transistor in the isolation tank region of the semiconductor layer and having an n-type base formed by a portion of the n-type semiconductor layer, a p-type emitter formed by a portion of the p-type base region of the npn bipolar transistor, and a p-type collector formed by a p-type second collector region in the isolation tank region of the semiconductor layer and spaced apart from the p-type base region and from the n-type collector region of the npn bipolar transistor.

Inventor(s): Aravind Appaswamy

CPC Classification: H10D84/645 (No explanation available)

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