20250221008. Semiconductor De (SAMSUNG ELECTRONICS ., .)
SEMICONDUCTOR DEVICE
Abstract: a semiconductor device includes a channel layer, a barrier layer positioned above the channel layer and having a material with a different energy band gap than the channel layer, source and drain electrodes positioned on the channel layer, a gate electrode positioned above the barrier layer between the source and drain electrodes and a gate semiconductor layer positioned between the barrier layer and the gate electrode. the width of the gate electrode is smaller than the width of the gate semiconductor layer at a junction surface of the gate electrode and the gate semiconductor layer.
Inventor(s): JUNHYUK PARK, SANGHYUN KIM, JONGSEOB KIM, JOONYONG KIM, SEONG SEOK YANG, JUNG-WOOK LEE
CPC Classification: H10D64/667 (No explanation available)
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