SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract: provided is a semiconductor device. the semiconductor device includes a semiconductor layer including silicon, a first silicide layer in the semiconductor layer, and a second silicide layer provided on the first silicide layer. the first silicide layer includes a metal other than titanium, and the second silicide layer includes tisihaving a c54 crystallization structure. a contact resistance of the semiconductor device may be reduced.

Inventor(s): Byunghoon NA, Haeryong KIM, Woonghyeon PARK, Jaeho LEE, Jooho LEE

CPC Classification: H10D64/647 (No explanation available)

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