SILICON CARBIDE BASED SEMICONDUCTOR DEVICES WITH RING-SHAPED CHANNEL REGIONS AND/OR CHANNEL REGIONS THAT EXTEND IN MULTIPLE DIRECTIONS IN PLAN VIEW

Abstract: a semiconductor device such as a mosfet or igbt comprises a semiconductor layer structure that includes a drift region having a first conductivity type, a plurality of channel regions that each have a second conductivity type, and a plurality of jfet regions that each have the first conductivity type. each channel region comprises a ring-shaped channel region that has a ring shape and surrounds a respective one of the jfet regions when viewed in plan view.

Inventor(s): Daniel Jenner Lichtenwalner

CPC Classification: H10D62/235 (No explanation available)

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