FINFET DEVICE AND METHOD FOR MANUFACTURING SAME

Abstract: a finfet device that may include a substrate. a drain layer on a first side of the substrate. a drift layer on a second side of the substrate. the drift layer having a fin-shaped portion and a recessed portion. a doped-well layer over the recessed portion of the drift layer and along sides of the fin-shaped portion of the drift layer. a body layer and a source layer formed over a portion of the doped-well layer over the recessed portion of the drift layer. an insulating layer over the doped-well layer. a gate electrode over the insulating layer.

Inventor(s): Shesh Mani Pandey, Bruce Odekirk, Randy L. Yach

CPC Classification: H10D62/117 (No explanation available)

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