MONOLITHIC BIDIRECTIONAL JFET SWITCH

Abstract: a semiconductor device includes a substrate and a drift layer on the substrate, the drift layer having a first conductivity type. the device includes a first plurality of vertical junction field effect (jfet) subcells and a second plurality of vertical jfet subcells on the drift layer. the first plurality of vertical jfet subcells are connected in parallel to form a first jfet device, and the second plurality of vertical jfet subcells are connected in parallel to form a second jfet device. the second jfet device is connected in anti-series with the first jfet device through the drift layer. the device further includes a first gate electrode and a first current terminal in contact with the first plurality of vertical jfet subcells, and a second gate electrode and a second current terminal in contact with the second plurality of vertical jfet subcells.

Inventor(s): Rahul R. Potera, Ajith Kanale

CPC Classification: H10D30/831 (No explanation available)

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