SEMICONDUCTOR DEVICE

Abstract: a semiconductor device is provided. the semiconductor device includes a semiconductor layer, an electrode disposed on the semiconductor layer, and a ferroelectric layer arranged between the semiconductor layer and the electrode, the ferroelectric layer including an orthorhombic crystal structure of an oiv phase (space group: pmn21) and doped with a dopant having an ionic radius larger than that of a hafnium ion or an oxygen ion at 2.8 at % or more.

Inventor(s): Dukhyun CHOE, Sangjun LEE, Seunggeol NAM, Eunha LEE, Hyangsook LEE

CPC Classification: H10D30/701 (No explanation available)

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