20250220968. Integrated Circuit Structure (Intel)
INTEGRATED CIRCUIT STRUCTURES HAVING DIRECT-ASSEMBLED LINKS FOR UNIFORM GRID METAL GATE AND TRENCH CONTACT CUT
Abstract: integrated circuit structures having links for uniform grid metal gate and trench contact cut are described. for example, an integrated circuit structure includes a gate electrode over a vertical stack of horizontal nanowires or a fin. a conductive trench contact is adjacent to the gate electrode, with a dielectric sidewall spacer there between. first and second parallel dielectric cut plug structures extend through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact. a first conductive link is in a recess of the first dielectric cut plug structure and is in contact with a side of the gate electrode. a second conductive link is in a recess of the second dielectric cut plug structure and is in contact with a side of the conductive trench contact.
Inventor(s): Leonard P. GULER, Meenakshisundaram RAMANATHAN, Saurabh ACHARYA, Shengsi LIU, Manish CHANDHOK, Sean PURSEL, Gurpreet SINGH, Eungnak HAN, Robert SEIDEL, Florian GSTREIN, Bharath BANGALORE RAJEEVA
CPC Classification: H10D30/6735 (No explanation available)
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- Patent Applications
- Intel Corporation
- CPC H10D30/6735
- Leonard P. GULER of Hillsboro OR US
- Meenakshisundaram RAMANATHAN of Hillsboro OR US
- Saurabh ACHARYA of Beaverton OR US
- Shengsi LIU of Portland OR US
- Manish CHANDHOK of Beaverton OR US
- Sean PURSEL of Tigard OR US
- Gurpreet SINGH of Beaverton OR US
- Eungnak HAN of Portland OR US
- Robert SEIDEL of Tigard OR US
- Florian GSTREIN of Portland OR US
- Bharath BANGALORE RAJEEVA of Hillsboro OR US