LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE

Abstract: a lateral iii-n device has a vertical gate module with iii-n material orientated in an n-polar or a group-iii polar orientation. a iii-n material structure has a iii-n buffer layer, a iii-n barrier layer, and a iii-n channel layer. a compositional difference between the iii-n barrier layer and the iii-n channel layer causes a 2deg channel to be induced in the iii-n channel layer. a p-type iii-n body layer is disposed over the iii-n channel layer in a source side access region but not over a drain side access region. a n-type iii-n capping layer over the p-type iii-n body layer. a source electrode that contacts the n-type iii-n capping layer is electrically connected to the p-type iii-n body layer and is electrically isolated from the 2deg channel when the gate electrode is biased relative to the source electrode at a voltage that is below a threshold voltage.

Inventor(s): Umesh Mishra, Davide Bisi, Geetak Gupta, Carl Joseph Neufeld, Brian L. Swenson, Rakesh K. Lal

CPC Classification: H10D30/477 (No explanation available)

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