HEMT Device with Unmetallized Gate

Abstract: an integrated circuit includes a first iii-n material layer, and a different second iii-n material layer supported by the first iii-n material layer. a p-doped iii-n material layer over the second iii-n material layer includes a wider portion having a first width in a first lateral direction parallel to the top surface, and a narrower portion extending from the wider portion in a different second lateral direction parallel to the top surface, the narrower portion having a second width in the first lateral direction less than the first width.

Inventor(s): Dong Seup Lee

CPC Classification: H10D30/475 (No explanation available)

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