SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF

Abstract: a method is provided. the method includes forming a plurality of stacks of semiconductor layers. each of the stacks includes a plurality of first semiconductor layers and a plurality of second layers alternately stacked with each other. a gate electrode structure is then formed on each of the stacks of semiconductor layers, each of the gate electrode structures including a gate spacer. an epitaxial layer is formed in an opening between each pair of neighboring stacks of semiconductor layers. after formation of the epitaxial layer, oxygen ion beams are applied to the gate spacer with a tilt angle to form oxidized materials on the gate spacers with a tilt angle. the oxidized materials are then removed by diluted hf solution.

Inventor(s): Yi-Chen LO, Ding-Kang SHIH, Chia-Yun CHENG, Yu-Wei LU

CPC Classification: H10D30/024 (No explanation available)

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