20250220940. Device Triggered Sil (GlobalFoundries U.S. .)
DEVICE TRIGGERED SILICON CONTROL RECTIFIER
Abstract: the present disclosure relates to semiconductor structures and, more particularly, to a device triggered silicon control rectifier (scr) and methods of manufacture. the structure includes: a vertical silicon controlled rectifier; a lateral triggering device including a first diffusion region, a second diffusion region and a third diffusion region, the third diffusion region being shared with the vertical silicon controlled rectifier; and a body contact over the first diffusion region.
Inventor(s): Sagar Premnath KARALKAR, Alain François LOISEAU, Meng MIAO, Anindya NATH, Wei LIANG, Souvick MITRA, Rajendran KRISHNASAMY
CPC Classification: H10D18/251 (No explanation available)
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- Patent Applications
- GlobalFoundries U.S. Inc.
- CPC H10D18/251
- Sagar Premnath KARALKAR of Singapore SG
- Alain François LOISEAU of Williston VT US
- Meng MIAO of Williston VT US
- Anindya NATH of Essex Junction VT US
- Wei LIANG of South Burlington VT US
- Souvick MITRA of Essex Junction VT US
- Rajendran KRISHNASAMY of Essex Junction VT US