ELECTROSTATIC DEVICE

Abstract: the present disclosure relates to semiconductor structures and, more particularly, to electrostatic devices and methods of manufacture. the structure includes: a device having a collector region, an emitter region, and a base region; an oxidation structure within the base region; and an isolation structure abutting the oxidation structure and extending between the base region and the emitter region.

Inventor(s): Jie Zeng, Kyong Jin Hwang

CPC Classification: H10D10/60 (No explanation available)

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