Trench Capacitor and Method for Manufacturing the Same

Abstract: the trench capacitor includes a semiconductor substrate, a trench array and at least one capacitor layer. the trench array has at least one trench segment disposed in the semiconductor substrate. each one of the at least one trench segment comprises a plurality of inner trenches oriented lengthwise along a same direction, and a side trench bordering an outer edge of each one of the at least one trench segment. the inner trenches and the side trench in each one of the at least one trench segment are communicated with each other. the at least one capacitor layer conformally lines a surface of the semiconductor substrate which has the trench array. each one of the at least one capacitor layer includes a dielectric layer and a conducting layer disposed on the dielectric layer.

Inventor(s): Yanqiang DU, Jiakun Wang

CPC Classification: H10D1/716 (No explanation available)

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