DEFECT SELF-COMPENSATION MATERIALS FOR HIGH ENDURANCE (ANTI-)FERROELECTRIC CAPACITORS WITH HAFNIUM OXIDE BASED MATERIAL SYSTEMS

Abstract: apparatuses, systems, and techniques related to ferroelectric material systems including hafnium oxide-based ferroelectric layers are described. a ferroelectric material system includes a hafnium oxide-based ferroelectric layer and a defect compensation material on the hafnium oxide-based ferroelectric layer. the defect compensation material is an oxide having a stronger bound dissociation energy relative to the hafnium oxide-based ferroelectric layer to compensate for oxygen defects formed in the hafnium oxide-based ferroelectric layer.

Inventor(s): Sou-Chi Chang, Sarah Atanasov, Bernal Granados Alpizar, Christopher Jezewski, Christopher Neumann, Uygar Avci, Nazila Haratipour

CPC Classification: H10D1/692 (No explanation available)

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