20250220922. Method Manufacturing Semiconductor Structu (TAIWAN SEMICONDUCTOR MANUFACTURING .)

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

Abstract: the present disclosure provides a method for manufacturing a semiconductor structure. the method includes: forming a carbon-based layer in a memory region and a logic region, forming a bottom electrode via in the carbon-based layer, forming a magnetic tunneling junction (mtj) multilayer over the bottom electrode via, and patterning the mtj multilayer to form a mtj cell by an ion beam etch. the carbon-based layer laterally surrounding a middle portion of the bottom electrode via without surrounding the mtj cell.

Inventor(s): Harry-Hak-Lay CHUANG, Sheng-Huang HUANG, Keng-Ming KUO, Hung Cho WANG

CPC Classification: H10B61/22 (ELECTRONIC MEMORY DEVICES)

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