SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract: enhancing the performance of semiconductor devices by reducing the operating voltage of a ferroelectric memory equipped with a ferroelectric film. on a semiconductor substrate, forming a laminated body including a paraelectric film, which is an insulating film, and the ferroelectric film made of three or more layers of ferroelectric layers to on the insulating film, and forming a metal film and a gate electrode on the ferroelectric film. by discretely placing impurity particles between the ferroelectric layers that are in contact with each other, the crystallinity of the ferroelectric film is enhanced.

Inventor(s): Tadashi YAMAGUCHI

CPC Classification: H10B51/30 (ELECTRONIC MEMORY DEVICES)

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