THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

Abstract: in an example, a three-dimensional (3d) memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, a semiconductor layer over the memory stack and electrically connected to the channel structure, and a source contact over the memory stack and electrically connected to the semiconductor layer. the source contact and the memory stack are disposed on opposite sides of the semiconductor layer.

Inventor(s): Kun Zhang, Zhong Zhang, Lei Liu, Wenxi Zhou, Zhiliang Xia

CPC Classification: H10B43/27 (ELECTRONIC MEMORY DEVICES)

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