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20250219632. Metho (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)

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METHOD FOR SUPPRESSING VOLTAGE OVERSHOOTS

Abstract: devices and methods are disclosed for facilitating faster switching of silicon-based and silicon carbide-based power transistors suitable for use in electric vehicles. the disclosed techniques can minimize the impact on turn-on and turn-off losses, while reducing gate voltage and drain voltage spikes during device switching. a fast/slow cell design incorporating shielded gate mosfets controls gate-to-drain capacitance and gate resistances to optimize suppression of voltage overshoot.

Inventor(s): Joseph Andrew YEDINAK, Gary Horst LOECHELT, Xiaoli WU

CPC Classification: H03K17/08104 (Modifications for protecting switching circuit against overcurrent or overvoltage)

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