GALLIUM NITRIDE SURFACE ACOUSTIC WAVE RESONATOR

Abstract: a gallium nitride surface acoustic wave resonator comprises a substrate comprising an epitaxial growth surface; a carbon nanotube layer located on the substrate and comprising a plurality of holes, and the epitaxial growth surface of the substrate exposed through the plurality of holes; a gallium nitride layer located on the carbon nanotube layer; an interdigital transducer located on the gallium nitride layer; and two reflection grating units respectively located on both sides of the interdigital transducer.

Inventor(s): LEI XIAO, Yang Wei, Jing Wang, Shou-Shan Fan

CPC Classification: H03H9/02574 (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing ; arrangements for producing a reverberation or echo sound ; impedance networks or resonators consisting of distributed impedances, e.g. of the waveguide type, ; control of amplification, e.g. bandwidth control of amplifiers, ; tuning resonant circuits, e.g. tuning coupled resonant circuits, ; networks for modifying the frequency characteristics of communication systems ))

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