STRAINED PIEZOELECTRIC DEVICES FOR RADIOFREQUENCY RESONATORS AND FABRICATION METHODS THEREOF

Abstract: disclosed are methods of fabrication and related piezoelectric devices comprising a piezoelectric layer with an induced compressive strain along a z-axis. the methods include formation of a stress layer on a bottom side of a wafer substrate, after deposition of the piezoelectric layer. stress layer removal results in an induced compressive strain along the z-axis which increases the electromechanical coupling coefficient, and thereby piezoelectric performance. related devices are also disclosed, including bulk acoustic wave (baw) thin film resonators (fbar), which are fabricated in accordance with the disclosed methods.

Inventor(s): Mordechai Kornbluth, Sanjay Gopalan, Christoph Schelling, Simon Schneider

CPC Classification: H03H9/02133 (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing ; arrangements for producing a reverberation or echo sound ; impedance networks or resonators consisting of distributed impedances, e.g. of the waveguide type, ; control of amplification, e.g. bandwidth control of amplifiers, ; tuning resonant circuits, e.g. tuning coupled resonant circuits, ; networks for modifying the frequency characteristics of communication systems ))

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