Semiconductor Device and Method of Making a Chip-on-Wafer Underfill Barrier

Abstract: a semiconductor device has a first semiconductor die and a first insulating layer formed over the first semiconductor die. a trench is formed in the first insulating layer. a second insulating layer is formed over the first insulating layer. a recess forms in the second insulating layer over the trench automatically as part of the formation process of the second insulating layer. a second semiconductor die is mounted over the second insulating layer. the recess completely surrounds the second semiconductor die in plan view. an underfill is dispensed between the first semiconductor die and second semiconductor die.

Inventor(s): Marites Roque, Linda Pei Ee Chua, Rowena Zarate, Yi Jing Eric Chong, Kai Chong Chan

CPC Classification: H01L24/32 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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