SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Abstract: a semiconductor device may include: a first source/drain pattern; a first active contact on the first source/drain pattern; a power line above the first active contact; and a first via contact connecting the first active contact to the power line, wherein the first via contact comprises a first side surface and a second side surface, which are opposite to each other in a first direction, the first side surface is inclined at a first angle to a top surface of the first active contact, the second side surface is inclined at a second angle to the top surface of the first active contact, and the first angle is an obtuse angle, and the second angle is an acute angle.

Inventor(s): Jongsoon PARK, Hyonwook RA, Sangduk PARK, Keunhee BAI, Sughyun SUNG, Jinwook LEE

CPC Classification: H01L23/535 (including internal interconnections, e.g. cross-under constructions {(internal lead connections )})

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