TRENCH CAPACITOR IN INTERCONNECT REGION

Abstract: techniques are provided herein for forming one or more mim trench capacitors in the interconnect region above the device layer of an integrated circuit. in an example, the mim trench capacitor(s) are formed within one of the upper interconnect layers of the interconnect region, and thus can have a relatively high height (e.g., greater than about 200 nm). an interconnect layer included in a stack of interconnect layers includes a mim capacitor having a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. the mim capacitor runs along the outside surface of a plurality of dielectric fins, which greatly increases the surface area of the capacitor within a relatively small plan footprint. the first and second electrodes may connect with one or more topside contacts and/or one or more buried conductive lines.

Inventor(s): Denzil S. Frost, Che-Yun Lin, Gokul Malyavanatham, Dragos Seghete, Jack Yaung

CPC Classification: H01L23/5223 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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